Imaging apparatuses and a time of flight imaging method
摘要
說(shuō)明書(shū)
The image sensor circuit 101 may include a TOF sensor pixel array such as a two-dimensional array of a plurality of TOF sensor pixels. Each TOF sensor pixel 102 may include a photodetection circuit for the detection of light. For example, the photodetection circuit may include a generation zone, e.g. a photosensitive region, such as a depletion region or space charge region, where photogenerated charge carriers (e.g. positive charge-carriers, e.g. holes, or negative charge-carriers, e.g. electrons) may be generated, for example. The photodetection circuit may be implemented by a photodiode, for example. The number of photogenerated charge carriers generated in each individual TOF sensor pixel 102 may be proportional to the intensity of light emitted from the first and/or second light emitter, subsequently reflected by the object and received by that TOF sensor pixel 102. Each TOF sensor pixel 102 of the image sensor circuit 102 may produce sensor pixel image data, which may be based on an electrical signal, e.g. a voltage signal or current signal proportional to the number of photogenerated charge carriers generated by the pixel element.
