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Semiconductor devices including a dummy gate structure on a fin

專(zhuān)利號(hào)
US10096605B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
Samsung Electronics Co., Ltd.（KR）
發(fā)明人
Sang-Jine Park; Kee-Sang Kwon; Do-Hyoung Kim; Bo-Un Yoon; Keun-Hee Bai; Kwang-Yong Yang; Kyoung-Hwan Yeo; Yong-Ho Jeon
IPC分類(lèi)
H01L29/06; H01L27/11; H01L27/088; H01L21/8234; H01L29/78; H01L27/092; H01L29/08; H01L29/16; H01L29/161; H01L29/165; H01L21/762
技術(shù)領(lǐng)域
layer,gate,141b,dummy,first,insulation,spacer,may,recess,fins
地域： Suwon-si, Gyeonggi-do

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

說(shuō)明書(shū)

The first to third fins F1 to F3 may protrude in a third direction Z1. The first to third fins F1 to F3 may extend in a lengthwise direction, that is, lengthwise in a first direction X1. Each of the first to third fins F1 to F3 may have long sides and short sides. The first to third fins F1 to F3 may be disposed on the substrate 101 to be spaced apart from one another. For example, the first to third fins F1 to F3 may be spaced apart from one another in the second direction Y1. In FIG. 1, the long side direction corresponds to the first direction X1 and the short side direction corresponds to the second direction Y1, but aspects of present inventive concepts are not limited thereto. In each of the first to third fins F1 to F3, for example, the long side direction may correspond to the second direction Y1 and the short side direction may correspond to the first direction X1.

Each of the first to third fins F1 to F3 may be part of the substrate 101 or may include an epitaxial layer grown from the substrate 101. The first to third fins F1 to F3 may include, for example, Si or SiGe. The field insulation layer 110 may be formed on the substrate 101 and may expose top portions of sidewalls of the first to third fins F1 to F3. The field insulation layer 110 may be, for example, an oxide layer.

權(quán)利要求

1
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