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Semiconductor devices including a dummy gate structure on a fin

專利號(hào)
US10096605B2
公開日期
2018-10-09
申請(qǐng)人
Samsung Electronics Co., Ltd.（KR）
發(fā)明人
Sang-Jine Park; Kee-Sang Kwon; Do-Hyoung Kim; Bo-Un Yoon; Keun-Hee Bai; Kwang-Yong Yang; Kyoung-Hwan Yeo; Yong-Ho Jeon
IPC分類
H01L29/06; H01L27/11; H01L27/088; H01L21/8234; H01L29/78; H01L27/092; H01L29/08; H01L29/16; H01L29/161; H01L29/165; H01L21/762
技術(shù)領(lǐng)域
layer,gate,141b,dummy,first,insulation,spacer,may,recess,fins
地域： Suwon-si, Gyeonggi-do

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

說明書

The first and second gate structures 151a and 151b and the dummy gate structure 152 are disposed to be spaced apart from each other. The first and second gate structures 151a and 151b and the dummy gate structure 152 may cross the first to third fins F1 to F3, respectively. The dummy gate structure 152 is disposed on the device isolation layer 143. In FIG. 1, the first and second gate structures 151a and 151b and the dummy gate structure 152 extending in the second direction Y1 are illustrated, but aspects of present inventive concepts are not limited thereto. The first and second gate structures 151a and 151b and the dummy gate structure 152 may cross/overlap each of the first to third fins F1 to F3 while forming an acute angle or an obtuse angle with the first to third fins F1 to F3.

The recess 141b aligned in the second direction Y1 is formed in each of the first to third fins F1 to F3. A bottom surface of the recess 141b is lower than or at the same level with bottom surfaces of the first to third source/drain regions 121, 123 and 125. In FIG. 2, the recess 141b is illustrated with the shape of a trench tapering away from its top portion, but aspects of present inventive concepts are not limited thereto. The recess 141b may have, for example, a U-shape, a V-shape, a rectangular shape, or a trapezoidal shape.

權(quán)利要求

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