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Semiconductor devices including a dummy gate structure on a fin

專利號
US10096605B2
公開日期
2018-10-09
申請人
Samsung Electronics Co., Ltd.(KR)
發(fā)明人
Sang-Jine Park; Kee-Sang Kwon; Do-Hyoung Kim; Bo-Un Yoon; Keun-Hee Bai; Kwang-Yong Yang; Kyoung-Hwan Yeo; Yong-Ho Jeon
IPC分類
H01L29/06; H01L27/11; H01L27/088; H01L21/8234; H01L29/78; H01L27/092; H01L29/08; H01L29/16; H01L29/161; H01L29/165; H01L21/762
技術(shù)領(lǐng)域
layer,gate,141b,dummy,first,insulation,spacer,may,recess,fins
地域: Suwon-si, Gyeonggi-do

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

說明書

The spacers 116 and 117 include first and second regions 116a and 116b and third and fourth regions 117a and 117b, respectively. The second region 116b is disposed on the first region 116a and the fourth region 117b is disposed on the third region 117a. A width of the first region 116a is greater than or equal to a width of the second region 116b, and a width of the third region 117a is greater than or equal to a width of the fourth region 117b. Therefore, the spacers 116 and 117 may have L shapes facing each other. Here, the phrase “facing each other” may mean that a distance between the first region 116a and the third region 117a is shorter than a distance between the second region 116b and the fourth region 117b. In a case where the spacers 116 and 117 do not face each other, the first and third regions 116a and 117a may protrude in opposite directions. Therefore, if the spacers 116 and 117 do not face each other, the distance between the first region 116a and the third region 117a is equal to the distance between the second region 116b and the fourth region 117b.

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