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Semiconductor devices including a dummy gate structure on a fin

專利號(hào)
US10096605B2
公開日期
2018-10-09
申請(qǐng)人
Samsung Electronics Co., Ltd.（KR）
發(fā)明人
Sang-Jine Park; Kee-Sang Kwon; Do-Hyoung Kim; Bo-Un Yoon; Keun-Hee Bai; Kwang-Yong Yang; Kyoung-Hwan Yeo; Yong-Ho Jeon
IPC分類
H01L29/06; H01L27/11; H01L27/088; H01L21/8234; H01L29/78; H01L27/092; H01L29/08; H01L29/16; H01L29/161; H01L29/165; H01L21/762
技術(shù)領(lǐng)域
layer,gate,141b,dummy,first,insulation,spacer,may,recess,fins
地域： Suwon-si, Gyeonggi-do

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

說明書

The dummy gate structure 152 may include the dummy gate insulation layer 153c, the barrier layer 154, and the dummy gate electrode 155c, and the dummy gate electrode 155c may include first and second metal layers MG1 and MG2.

The dummy gate insulation layer 153c is disposed on the sidewalls of the spacer 115 but is not disposed in the recess 141b. The dummy gate insulation layer 153c may have an L shape. The barrier layer 154 is disposed on the dummy gate insulation layer 153c but is not disposed on the recess 141b. A width of the recess 141b is wider than a width of the first spacer 115.

The dummy gate electrode 155c fills the recess 141b and is formed on the recess 141b. For example, the recess 141b may be filled with the first metal layer MG1, and the second metal layer MG2 may be formed on the first metal layer MG1.

Hereinafter, a semiconductor device 6 according to some embodiments of present inventive concepts will be described with reference to FIG. 11. In the semiconductor device 6, repeated descriptions of the same content as that of the semiconductor device 5 may be omitted, and the following description will focus on differences between the semiconductor devices 5 and 6.

權(quán)利要求

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