Semiconductor devices including a dummy gate structure on a fin
摘要
說(shuō)明書
In the second region II, fourth to ninth fins F11, F12, F21, F22, F31 and F32 may protrude from the substrate 101. The fourth and fifth fins F1 and F12 may be aligned and extend in the first direction X1 and may be spaced apart from one another by a trench 241b. The sixth and seventh fins F21 and F22 may be aligned and extend in the first direction X1 and may be spaced apart from one another by the trench 241b. The eighth and ninth fins F31 and F32 may be aligned and extend in the first direction X1 and may be spaced apart from one another by the trench 241b. The fourth, sixth and eighth fins F11, F21 and F31 are spaced apart from one another in the second direction Y1, and the fifth, seventh and ninth fins F12, F22 and F32 are spaced apart from one another in the second direction Y1. The trench 241b may extend in the second direction Y1.
A height L1 of the recess 141b is smaller than a height L2 of the trench 241b, and a width W1 of the recess 141b is smaller than a width W2 of the trench 241b. A height L3 of a shallow trench isolation (STI) region between fins, for example, between the second fin F2 and the third fin F3 is greater than the height L1 of the recess 141b and smaller than the height L2 of the trench 241b. The trench 241b may be formed by etching a portion of the substrate 101. The height L3 of the STI region may be equal to heights of the second fin F2 and the third fin F3.
