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Semiconductor devices including a dummy gate structure on a fin

專(zhuān)利號(hào)
US10096605B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
Samsung Electronics Co., Ltd.（KR）
發(fā)明人
Sang-Jine Park; Kee-Sang Kwon; Do-Hyoung Kim; Bo-Un Yoon; Keun-Hee Bai; Kwang-Yong Yang; Kyoung-Hwan Yeo; Yong-Ho Jeon
IPC分類(lèi)
H01L29/06; H01L27/11; H01L27/088; H01L21/8234; H01L29/78; H01L27/092; H01L29/08; H01L29/16; H01L29/161; H01L29/165; H01L21/762
技術(shù)領(lǐng)域
layer,gate,141b,dummy,first,insulation,spacer,may,recess,fins
地域： Suwon-si, Gyeonggi-do

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

說(shuō)明書(shū)

Unlike in the semiconductor device 10 shown in FIG. 23, in the semiconductor device 11 according to some embodiments of present inventive concepts, a device isolation layer 175 may cover top surfaces of spacers 116 and 117 disposed on opposite sidewalls of the device isolation layer 175. Therefore, heights of the spacers 116 and 117 disposed on opposite sidewalls of the device isolation layer 175 are smaller than a height of a first spacer 115 disposed on opposite sidewalls of first and second gate structures 151a and 151b.

The device isolation layer 175 may include first to third regions 175a, 175b and 175c on a recess 141b. The first region 175a is disposed between opposing portions of the inner spacer 170, the second region 175b is disposed on the first region 175a, and the third region 175c is disposed on the second region 175b. A width of the third region 175c may be greater than a width of the second region 175b and the width of the second region 175b may be greater than a width of the first region 175a.

A capping layer 173 may be formed along sidewalls of the first interlayer insulation layer 131, a top surface and sidewalls of the spacers 116 and 117, a top surface and sidewalls of the inner spacer 170 and sidewalls of the recess 141b. The capping layer 173 may have a stepped shape.

權(quán)利要求

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