Next, as shown in FIG. 68, the first etch mask layer 137 is patterned using the second etch mask pattern 139. As a result, a first etch mask pattern 137 is formed, and a second hard mask layer 113b (e.g., as illustrated in FIG. 39) is exposed.
Next, the second etch mask pattern 139 disposed on the first etch mask pattern 137 is removed.
As shown in FIG. 69, after forming the first etch mask pattern 137, a second mask spacer 1137 may be formed on sidewalls of the first etch mask pattern 137. The forming of the second mask spacer 1137 may protect/prevent the first etch mask pattern 137a from collapsing in a subsequent process.
Referring to FIG. 70, the second hard mask layer 113b and the second sacrificial gate structure 111b are sequentially removed using the first etch mask pattern 137. The exposed second hard mask layer 113b is first removed to expose a top surface of the second sacrificial gate structure 111b, followed by removing the second sacrificial gate structure 111b. The first recess 141a may be formed by removing the second sacrificial gate structure 111b, and first to third fins F1 to F3 are exposed by the first recess 141a.
