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Modified tungsten silicon

專利號
US10096609B2
公開日期
2018-10-09
申請人
GLOBALFOUNDRIES INC.(KY Grand Cayman)
發(fā)明人
Nicolas L. Breil; Domingo A. Ferrer; Keith Kwong Hon Wong
IPC分類
H01L23/525; H01L27/112; H01L23/522; H01L23/532; H01L21/768
技術領域
tungsten,mx,silicon,tetragonal,layer,conductive,may,fuse,deposition,be
地域: Grand Cayman

摘要

A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.

說明書

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The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiment, the practical application or technical improvement over technologies found in the marketplace, or to enable other of ordinary skill in the art to understand the embodiments disclosed herein. It is therefore intended that the present invention not be limited to the exact forms and details described and illustrated but fall within the scope of the appended claims.

權利要求

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