An embodiment of the invention may include a method of forming a semiconductor structure. The method may include forming a tungsten silicon layer on an insulator. The tungsten silicon layer may be converted to a tetragonal phase tungsten silicon layer. A first conductive material and a second conductive material on the tungsten silicon layer may be formed. The first conductive material and the second conductive material may be electrically insulated from each other, except for the tetragonal phase silicon layer that forms an electrical connection between the first conductive material and the second conductive material.

Another embodiment of the invention may include a method of forming a semiconductor structure. The method may include forming a tungsten silicon layer on an insulator. The tungsten silicon layer may have a ratio of silicon to tungsten of about 2.7. The tungsten silicon layer may be converted to a tetragonal phase tungsten silicon layer. A first conductive material and a second conductive material on the tungsten silicon layer may be formed. The first conductive material and the second conductive material may be electrically insulated from each other, except for the tetragonal phase silicon layer that forms an electrical connection between the first conductive material and the second conductive material.

Another embodiment of the invention may include a semiconductor structure. The semiconductor structure may include an insulator and a tetragonal phase tungsten silicon layer on the Mx layer. There may be a first conductive material contacting a first region of the tetragonal phase tungsten silicon layer and a second conductive material contacting a second region of the tetragonal phase tungsten silicon layer. The tetragonal phase tungsten silicon layer may form an electrical connection between the first conductive material and the second conductive material.