In the interest of not obscuring the presentation of embodiments of the present invention, in the following detailed description, some processing steps or operations that are known in the art may have been combined together for presentation and for illustration purposes and in some instances may have not been described in detail. In other instances, some processing steps or operations that are known in the art may not be described at all. It should be understood that the following description is rather focused on the distinctive features or elements of various embodiments of the present invention.

Tungsten silicon may be an effective material in creating precision resistors or eFuse structures for semiconductor chips. In some instances, deposition of a tungsten silicon layer 110 may create a layer having a formula of WSi_x. In order to create more efficient chips, resistance and T_CR (Temperature coefficient of Resistance) may be lowered by modifying the composition and stoichiometry of the tungsten silicon alloy after or during deposition. A lower TCR enables a higher uniformity for the chips manufactured in the wafer. Lower resistance allows lower voltage needed for programming the efuse elements.