Referring to FIG. 1, a tungsten silicon layer 110, for use in semiconductor devices, may be created by depositing tungsten silicon on an Mx layer 100. The resulting tungsten silicon layer 110 may have a chemical formula of WSix, where the ratio of silicon located in the crystal lattice of the structure is 2.2 to 3.0 that of tungsten, more preferably 2.6 to 2.8 that of tungsten, even more preferably 2.7 that of tungsten. The deposition of the tungsten silicon layer 110 may be performed using any suitable method in the art such as, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), molecular beam deposition (MBD), pulsed laser deposition (PLD), or liquid source misted chemical deposition (LSMCD). Following the deposition, the thickness of the tungsten silicon layer 110 may be 10 to 20 nm. The tungsten silicon layer 110 may be deposited on Mx layer 100, wherein the Mx layer 100 may be any suitable material, such as, for example, conductors, insulators, or combinations thereof. In an example embodiment, the Mx layer 100 may be an insulator such as, for example, metal oxides, metal nitrides or metal oxynitrides. In other embodiments, the Mx layer 100 may have a combination of insulator layers and conductive layers. In such embodiments, the conductive metal may be, for example, copper, aluminum, tungsten or combinations thereof.
