Referring now to FIG. 4, a set of conductive interconnects 140, containing a first conductive interconnect 141 and a second conductive interconnect 142, may be formed within the damascene opening 135. The set of conductive interconnects 140 may contain a liner and a metal fill may be deposited in via recess. The liner may be made of, for example, tantalum or tantalum nitride, or titanium and titanium nitride, as adhesion layer for subsequent tungsten deposition, and may include one or more layers of liner material. The metal fill may include, for example, copper, aluminum, or tungsten. The liner and metal fill may be formed using a filing technique such as electroplating, electroless plating, chemical vapor deposition, physical vapor deposition or a combination of methods. Following the creation of the set of conductive interconnects 140, the tetragonal phase tungsten silicon layer 120 forms an electrical connection from the first conductive interconnect 141 to the second conductive interconnect 142, and may be used as an e-fuse or precision resistor as part of a semiconductor device.