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Methods for coating semiconductor nanocrystals

專利號
US10096678B2
公開日期
2018-10-09
申請人
SAMSUNG ELECTRONICS CO., LTD(KR Gyeonggi-Do)
發(fā)明人
Craig Breen; Wenhao Liu
IPC分類
H01L29/15; H01L21/02; H01L29/225; C09K11/02; C09K11/88; B82Y20/00; B82Y40/00
技術領域
quantum,dots,phosphonic,or,core,in,acid,species,dot,shell
地域: Suwon-si

摘要

A coated quantum dot and methods of making coated quantum dots are provided.

說明書

This application is a continuation of International Application No. PCT/US2012/066137, filed 20 Nov. 2012, which was published in the English language as International Publication No. WO 2013/078242 on 30 May 2013, which International Application claims priority to U.S. Provisional Patent Application No. 61/562,457, filed on 22 Nov. 2011. Each of the foregoing is hereby incorporated herein by reference in its entirety for all purposes.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to semiconductor nanocrystals, also referred to as quantum dots, and to methods of coating or providing layers on quantum dots.

BACKGROUND OF THE INVENTION

Methods of making quantum dots are in the literature. For example, see US 20106849, U.S. Pat. No. 7,476,599 and WO 2009/120688. However, additional methods of making quantum dots with coatings or layers are desirable.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to quantum dots including an overcoating, methods for overcoating quantum dots, materials and products including quantum dots taught herein, and materials and products including quantum dots made by a method taught herein.

Embodiments of the present invention are directed to methods of providing one or more coatings or layers or shells on quantum dots. According to one aspect, a quantum dot to be provided with a coating or layer or shell may be referred to as a “core” particle or a “core” quantum dot. According to an additional aspect, the core particle is subjected to a high temperature process that forms a coating or layer or shell on the core particle to produce a core-shell quantum dot.

權利要求

1
What is claimed is:1. A method of making quantum dots having a coating thereon comprising:providing a reaction mixture including core quantum dots free of phosphonic acid or metal phosphonate species at the surfaces of the core quantum dots, one or more metal carboxylates and one or more chalcogenide sources at a temperature of greater than 240° C. to form a first coating on the core quantum dots from the metal carboxylate and chalcogenide source without addition of phosphine based compounds to form first coated quantum dots, wherein the metal and chalcogenide of the first coating are the same or different from elements included in the core; andcombining one or more metal precursors and one or more chalcogen precursors with the first coated quantum dots at a temperature of greater than 280° C. to form a second coating on the first coated quantum dots from the one or more metals and one or more chalcogens included in the precursors, wherein the one or more metals and one or more chalcogens included in the second coating comprises a composition that is different from the composition of at least one of the core or the first coating.2. The method of claim 1 wherein the one or more metal precursors for the second coating comprise one or more metal carboxylates.3. The method of claim 1 wherein the core quantum dots include group II-VI elements.4. The method of claim 1 wherein the first coating includes group II-VI elements.5. The method of claim 1 wherein the second coating includes group II-VI elements.6. The method of claim 1 wherein the second coating is CdxZn1-xS.7. The method of claim 1 wherein the core quantum dots are CdSe quantum dots.8. The method of claim 1 wherein the metal carboxylate and the chalcogenide source react immediately with each other at the reaction temperature to form nuclei of a predetermined semiconductor material.9. The method of claim 1, further comprisingpreparing core quantum dots having phosphonic acid or metal phosphonate species bound thereto as ligands; andremoving the bound phosphonic acid or bound metal phosphonate species from the core quantum dots to provide core quantum dots free of phosphonic acid or metal phosphonate species at the surfaces of the core quantum dots.
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