A further aspect of this description relates to a semiconductor device. The semiconductor device comprising a III-V semiconductor layer over a substrate; an active layer over the III-V semiconductor layer; a gate over the active layer; a passivation film over the gate and over the active layer, wherein the passivation film has a first opening; a source structure comprising an overhead portion, wherein the overhead portion is over at least a portion of the passivation film between the first opening of the passivation film and the gate; and a drain structure on an opposite side of the gate from the source structure. A distance between the first opening of the passivation film and the gate is different than a distance between the gate and the drain structure.

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.