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Field effect transistors having a fin

專利號(hào)
US10096696B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
MICRON TECHNOLOGY, INC.（US ID Boise）
發(fā)明人
Toru Tanzawa
IPC分類
H01L27/00; H01L29/66; H01L29/78; H01L29/06; H01L27/112
技術(shù)領(lǐng)域
dielectric,fin,drains,uppermost,vertical,may,fins,be,e.g,in
地域： ID ID Boise

摘要

An embodiment of a transistor has a semiconductor fin, a dielectric over the semiconductor fin, a control gate over the dielectric, and source/drains in the semiconductor fin and having upper surfaces below an uppermost surface of the semiconductor fin. Another embodiment of a transistor has first and second semiconductor fins, a first source/drain region in the first semiconductor fin and extending downward from an uppermost surface of the first semiconductor fin, a second source/drain region in the second semiconductor fin and extending downward from an uppermost surface of the second semiconductor fin, a dielectric between the first and second semiconductor fins and adjacent to sidewalls of the first and second semiconductor fins, and a control gate over the dielectric and between the first and second semiconductor fins and extending to a level below upper surfaces of the first and second source/drain regions.

說(shuō)明書(shū)

Dielectric 710 might be generally formed of one or more dielectric materials such as an oxide, e.g., silicon dioxide, a high-dielectric constant (e.g., high-K) dielectric, such as hafnium oxide, e.g., with a K of about 25, etc. Isolation regions 715 might be generally formed of one or more dielectric materials and may include for example an oxide, e.g., a field oxide and/or a high-density-plasma (HDP) oxide, or a spin-on dielectric material, e.g., hydrogen silsesquioxane (HSQ), hexamethyldisiloxane, octamethyltrisiloxane, etc. Isolation regions 715 might be silicon dioxide or hafnium oxide, for example.

FIG. 8 is a cross-sectional view in a y-z plane taken along line 8-8 in FIG. 6, and FIG. 9 is a cross-sectional view in an x-z plane taken along line 9-9 in FIG. 6, where cross-hatching is omitted in FIGS. 8 and 9 for clarity. Note that the cross-section in FIG. 8 corresponds to the cross-section in FIG. 3, and the cross-section in FIG. 9 corresponds to the cross-section in FIG. 4.

權(quán)利要求

1
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