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Field effect transistors having a fin

專利號
US10096696B2
公開日期
2018-10-09
申請人
MICRON TECHNOLOGY, INC.（US ID Boise）
發(fā)明人
Toru Tanzawa
IPC分類
H01L27/00; H01L29/66; H01L29/78; H01L29/06; H01L27/112
技術領域
dielectric,fin,drains,uppermost,vertical,may,fins,be,e.g,in
地域： ID ID Boise

摘要

An embodiment of a transistor has a semiconductor fin, a dielectric over the semiconductor fin, a control gate over the dielectric, and source/drains in the semiconductor fin and having upper surfaces below an uppermost surface of the semiconductor fin. Another embodiment of a transistor has first and second semiconductor fins, a first source/drain region in the first semiconductor fin and extending downward from an uppermost surface of the first semiconductor fin, a second source/drain region in the second semiconductor fin and extending downward from an uppermost surface of the second semiconductor fin, a dielectric between the first and second semiconductor fins and adjacent to sidewalls of the first and second semiconductor fins, and a control gate over the dielectric and between the first and second semiconductor fins and extending to a level below upper surfaces of the first and second source/drain regions.

說明書

A dielectric 810 may form a gate dielectric for the finFETs 600. Each finFET 600 may include a control gate 820 that may be over dielectric 810 and that may be coupled to or may form a portion of a control line 610. For some embodiments, dielectric 810 might extend downward on either side of semiconductor fins 720, e.g., adjacent to the sidewalls of semiconductor fins 720, to upper surfaces of dielectric 710. A control gate 820 may extend downward on either side of a semiconductor fin 720 to upper surfaces of dielectric 710, for example.

A contact, such as a gate contact 850, might be coupled to control line 6101. For example, gate contact 850 might be vertically aligned with an isolation region 715, as shown in FIG. 8.

A comparison FIGS. 3 and 8 shows that the control line 6101 does not extend vertically downward between the source/drains 615 of the finFETs 600 commonly coupled to control line 6101 as control line 1101 extends vertically downward between the source/drains 115 of the finFETs 100 commonly coupled to control line 1101.

權利要求

1
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