Source/drains 1240 and 1242 of transistor 1200 may be respectively formed in semiconductor fins 1210₂ and 1210₃ so that the upper surfaces (e.g., the uppermost) surfaces of source/drains 1240 and 1242 are at the vertical level Z₀′ and thus coincide with the uppermost surfaces of semiconductor fins 1210₂ and 1210₃, as shown in FIG. 12C. For example, source/drains 1240 and 1242 may extend downward respectively from the uppermost surfaces of semiconductor fins 1210₂ and 1210₃. Source/drains 1240 and 1242 may have a different conductivity type, such as an n-type conductivity, than semiconductor 1212, for example.

Conductive regions 1250 and 1252 may be respectively formed in semiconductor fins 1210₁ and 1210₄ so that the upper surfaces (e.g., the uppermost) surfaces of conductive regions 1250 and 1252 are at the vertical level 4 and thus coincide with the uppermost surfaces of semiconductor fins 1210₁ and 1210₄, as shown in FIG. 12C. For example, conductive regions 1250 and 1252 may extend downward respectively from the uppermost surfaces of semiconductor fins 1210₁ and 1210₄. Conductive regions 1250 and 1252 may have the same conductivity type, such as a p-type conductivity, as semiconductor 1212, for example.