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Integrated high side gate driver structure and circuit for driving high side power transistors

專利號
US10096705B2
公開日期
2018-10-09
申請人
Infineon Technologies Austria AG（AT Villach）
發(fā)明人
Allan Nogueras Nielsen; Mikkel H?yerby
IPC分類
H03F3/217; H01L29/78; H01L21/8238; H01L21/761; H01L27/06; H03K17/687
技術(shù)領(lǐng)域
driver,voltage,gate,transistor,diffusion,dc,high,ldnmos,class,supply
地域： Villach

摘要

An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity semiconductor material in which a first well diffusion including a second polarity semiconductor material is formed. An outer wall of the first well diffusion is abutted to the substrate. A second well diffusion, having first polarity semiconductor material, is arranged inside the first well diffusion such that an outer wall of the second well diffusion abuts an inner wall of the first well diffusion. The structure includes a gate driver having high side positive and negative supply voltage ports, and a driver input and output. The gate driver includes a transistor driver in the second well diffusion such that control and output terminals of the transistor driver are coupled to the driver input and output, respectively. The structure also includes respective electrical connections between the first and second well diffusions and the negative supply voltage port.

說明書

  • a positive voltage input coupled to a high side DC voltage supply of the class D amplifier,
  • a regulated DC voltage output coupled to the high side positive supply voltage port of the gate driver,
  • a DC voltage reference generator coupled between the high side negative supply voltage port and reference voltage input of the floating voltage regulator.

    • The power transistor of the output stage preferably comprises an output transistor of the class D amplifier and may be driven through the control terminal by a pulse width or pulse density modulated audio input signal of the class D amplifier. The class D amplifier may comprise a plurality of power transistor connected in an H-bridge topology. Each of the power transistors may comprise an LDMOS transistor such as LDNMOS transistor. The regulated DC voltage output may have a DC voltage which is at least 5 V higher than a DC supply voltage of the power transistor or transistors of the output stage to ensure that the gate voltage of an N type MOS power transistor can be driven into an appropriate low impedance on-state. The high side DC voltage supply of the class D amplifier may have a DC voltage which is at least 2 V higher than the regulated DC voltage output of the floating regulator to ensure that a pass transistor of the voltage regulator is adequately biased. The pass transistor may comprise a LDNMOS or LDPMOS transistor having drain-source terminals coupled between the positive voltage input of the regulator and the regulated DC voltage output.

    A third aspect of the invention relates to an integrated high side gate driver assembly comprising:

      權(quán)利要求

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