Embodiments of the invention will be described in more detail in connection with the append drawings in which:
FIG. 1 is a simplified schematic circuit diagram of a class D amplifier output stage which comprises a prior art integrated high side gate driver structure,
FIG. 2A) is a schematic circuit diagram of the class D amplifier output stage indicating connections to parasitic circuit capacitances and an external capacitance,
FIG. 2B) is a simplified cross-sectional view of a prior art well structure in a semiconductor substrate for the prior art integrated high side gate driver structure,
FIG. 3A) is a schematic circuit diagram of a class D amplifier output stage which comprises an integrated high side gate driver structure in accordance with a first embodiment of the invention,
FIG. 3B) is a simplified cross-sectional view of a well structure formed in a semiconductor substrate for the integrated high side gate driver structure in accordance with the first embodiment of the invention,
FIG. 4A) is a schematic circuit diagram of a class D amplifier output stage which comprises the integrated high side gate driver structure in accordance with the first embodiment of the invention; and
FIG. 4B) is a simplified cross-sectional view of the class D amplifier output stage depicted on FIG. 4A) embedded in a semiconductor substrate.
DESCRIPTION OF PREFERRED EMBODIMENTS
