More specifically, it is possible to connect a first resistive element between the source and the substrate of the MOS transistor and a second resistive element between the gate and the source of the MOS transistor, the gate and the substrate of the transistor not being connected together.

A combined bipolar and MOS effect is then obtained through the drain-substrate capacitances and through the drain-gate capacitances. That said, this combined effect is not amplified because of the absence of connection between the substrate and the gate of the transistor.

It would also be possible, in the context of a reversible operation, to leave the substrate and the gate of the MOS transistor floating. The bipolar and MOS effect is then obtained by the capacitive gate-substrate coupling.

So as to have an amplified effect, it is possible to electrically link the gate and the substrate of the transistor, and also advantageously provide for a resistor to be connected between the gate and the ground, the value of which can be adjusted to raise the value of the trigger threshold of the device, as explained in U.S. Pat. No. 9,019,666.

In this respect, it would be perfectly possible to envisage having the forked parts and said raised regions in contact, which amounts to electrically connecting the substrate B and the gate G of the transistor TR by having only a single contact situated for example on the gate region.

Furthermore, in the embodiment illustrated in FIG. 5, it would be possible to equip each transistor with a second forked part and a second substrate contact, as illustrated in FIG. 6.