According to another aspect, an integrated electronic device is proposed that comprises a semiconductive film, for example fully depleted, above a buried insulating layer, which is itself situated above a supporting substrate, an active zone produced within the semiconductive film, at least one first MOS transistor produced in and on the active zone and comprising a gate region produced above the active zone and having a rectilinear part situated between the source and drain regions and extended by at least one first forked part, at least one first raised semiconductive region situated above the active zone and at least partly within said first forked part, and at least one first substrate contact for the first transistor electrically coupled to, for example on, said first raised semiconductive region.

According to one embodiment of this aspect, the gate region comprises a second forked part extending said rectilinear part opposite the first forked part, the device further comprising a second raised semiconductive region situated above the active zone and at least partly within said second forked part, and a second substrate contact for the first transistor electrically coupled to, for example on, said second raised semiconductive region.

Each forked part can comprise an extension extending at right angles on either side of the rectilinear part out of the source and drain regions, a first branch connected to said extension and extending in the extension of the source region and a second branch connected to said extension and extending in the extension of the drain region, and each raised semiconductive region can extend at least partly between the corresponding first branch and second branch.