The forked part G2 further comprises a first branch G21 and a second branch G22 extending from the extension G20 in the extension of the source S and drain D regions.

The reference B denotes the substrate of the transistor TR.

According to a conventional embodiment in substrates of FDSOI type, the drain D and source S regions are produced in a raised fashion by epitaxial rework (i.e., growth), in order to allow for the contacts.

The semiconductive film further comprises a doped region of P+ type on which has been produced a raised silicon region 5 by epitaxial rework. The biasing of this region makes it possible to bias the substrate 1 of the transistor TR.

This raised region 5, here of P type, is produced between the first branch G21 and the second branch G22.

Here, the first branch G21 and the second branch G22 allow for a greater accuracy in the production of the region 5 because they delimit the epitaxied region.

Zones of metal silicide are, in this example, produced respectively on the gate G, drain D and source S regions, and on the region 5, and respectively allow for the gate PCG, drain PCD, source PCS and substrate PCB contacts.

The gate contacts are here produced on the branches G21 and G22 of the forked part G2 of the gate region G, via the metal silicide zone.