In an embodiment, the source region(s) 110 is formed on vertical channel region 106 by a deposition process such as, but not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), or molecular beam epitaxy (MBE). In one embodiment, the source region 110 is in situ doped with impurity atoms. In one embodiment, the source region 110 is doped with impurity atoms subsequent to formation. In one embodiment, the source region 110 is in situ doped with impurity atoms and further doped subsequent to formation. It is to be appreciated that the source region 110 may be composed of a like or different semiconductor material as that of the vertical channel region 110. In one embodiment, the source region 110 is composed of a crystalline silicon, silicon/germanium, germanium, or germanium tin layer, which may be doped with a charge carrier, such as but not limited to, phosphorus, arsenic, boron or a combination thereof. In another embodiment, the source region 110 is composed of a group III-V material such as, but not limited to, gallium nitride, gallium phosphide, gallium arsenide, indium phosphide, indium antimonide, indium gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, or a combination thereof, which may be doped with a charge carrier, such as but not limited to, carbon, silicon, germanium, oxygen, sulfur, selenium or tellurium.