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Transistor, semiconductor device, and electronic device

專(zhuān)利號(hào)
US10096720B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類(lèi)
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說(shuō)明書(shū)

Next, the insulating layer 114 and the insulating layer 115 are sequentially formed (see FIG. 13B). In this embodiment, a silicon oxynitride film is formed by a CVD method as the insulating layer 114. The insulating layer 114 is preferably an insulating layer containing excess oxygen. After the formation of the insulating layer 114, CMP treatment is preferably performed on the sample surface to reduce unevenness of the sample surface.

In this embodiment, an aluminum oxide film is formed by a sputtering method as the insulating layer 115. At this time, part of oxygen used as a sputtering gas is introduced into the insulating layer 114, whereby a region 114a to be an insulating layer containing excess oxygen is formed.

Part of oxygen in the insulating layer 114 reacts with hydrogen left in the insulating layer 114 to be water in some cases. Thus, in the case where the insulating layer 115 is removed and heat treatment is performed after the insulating layer 115 is formed, hydrogen left in the insulating layer 114 can be released as water. When the formation of the insulating layer 115, the removal of the insulating layer 115, and the heat treatment are repeated sequentially a plurality of times, the hydrogen concentration in the insulating layer 114 can be further reduced.

When oxygen doping treatment and heat treatment are performed after the formation of the insulating layer 114 before the formation of the insulating layer 115, hydrogen left in the insulating layer 114 can be released as water. When the oxygen doping treatment and the heat treatment are repeated sequentially a plurality of times, the hydrogen concentration in the insulating layer 114 can be further reduced.

權(quán)利要求

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