A portion of each of the insulating layer 115, the insulating layer 114, the insulating layer 113_2, the insulating layer 111_2, the semiconductor layer 109_2c, the insulating layer 108, the insulating layer 104, and the insulating layer 107 is removed, so that the opening 192_2a and the opening 192_2b are formed. The opening 192_2a includes a region overlapping with the wiring 118_2a. The opening 192_2b includes a region overlapping with the wiring 118_2b. A portion of each of the insulating layer 115, the insulating layer 114, and the insulating layer 113_2 is removed, so that the opening 192_2c is formed. The opening 192_2c includes a region overlapping with the electrode 112_2.
The opening 192_2a includes a region where the portion of the semiconductor layer 109_2c is exposed. The opening 192_2b includes a region where the portion of the semiconductor layer 109_2c is exposed.