白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Transistor, semiconductor device, and electronic device

專利號(hào)
US10096720B2
公開日期
2018-10-09
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.(JP Atsugi-shi, Kanagawa-ken)
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域: Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

A portion of each of the insulating layer 115, the insulating layer 114, the insulating layer 113_2, the insulating layer 111_2, the semiconductor layer 109_2c, the insulating layer 108, the insulating layer 104, and the insulating layer 107 is removed, so that the opening 192_2a and the opening 192_2b are formed. The opening 192_2a includes a region overlapping with the wiring 118_2a. The opening 192_2b includes a region overlapping with the wiring 118_2b. A portion of each of the insulating layer 115, the insulating layer 114, and the insulating layer 113_2 is removed, so that the opening 192_2c is formed. The opening 192_2c includes a region overlapping with the electrode 112_2.

The opening 192_2a includes a region where the portion of the semiconductor layer 109_2c is exposed. The opening 192_2b includes a region where the portion of the semiconductor layer 109_2c is exposed.

權(quán)利要求

1
微信群二維碼
意見反饋