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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術領域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

Oxygen doping treatment may be performed after the formation of the insulating layer 176. It is preferable that the heat treatment, the oxygen doping treatment, and the formation of the insulating layer 176 be successively performed without exposure to the air.

The insulating layer 176 can be formed by a sputtering method using a sputtering gas containing oxygen. By forming the insulating layer 176 by a sputtering method using a sputtering gas containing oxygen, oxygen can be supplied to the insulating layer 108 in forming the insulating layer 176. Part of oxygen contained in the insulating layer 108 is diffused to the semiconductor layer 109 by later heat treatment, so that oxygen vacancies in the semiconductor layer 109 can be reduced.

Modification Example 6

A semiconductor device 1000F illustrated in FIG. 18B includes a transistor 100F and a transistor 200F. The transistors 100F and 200F are different from the transistors 100 and 200 in that the insulating layer 119 is provided between the insulating layer 104 and the insulating layer 108. The transistor 100F includes an electrode 178 in the same layer as the insulating layer 119. The electrode 178 includes a region electrically connected to the electrode 105_1.

權利要求

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