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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術領域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

In the transistor 200I, the electrode 116_2a and the wiring 118_2a are electrically connected to each other through the electrode 105_2a. The electrode 116_2b and the wiring 118_2b are electrically connected to each other through the electrode 105_2b. The electrode 105_2a includes a region overlapping with the electrode 116_2a and a region overlapping with the wiring 118_2a. The electrode 105_2b includes a region overlapping with the electrode 116_2b and a region overlapping with the wiring 118_2b. The electrode 105_2 (the electrode 105_2a and the electrode 105_2b) can be formed using a material and a method similar to those of the electrode 105_1 at the same time.

Modification Example 10

A semiconductor device 1000J illustrated in FIG. 21 includes the transistor 100 and a transistor 200J. The transistor 200J is different from the transistor 200 in that the semiconductor layer 109_2a1, the semiconductor layer 109_2b1, the semiconductor layer 109_2a2, and the semiconductor layer 109_2b2 are provided. In addition, the transistor 200J is different from the transistor 200 in the shape of each of the insulating layers 113_2 and 111_2.

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