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Transistor, semiconductor device, and electronic device

專利號(hào)
US10096720B2
公開日期
2018-10-09
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說(shuō)明書

In the transistor 200J, the semiconductor layer 109_2c includes a region 189d overlapping with the semiconductor layer 109_2b1, a region 189e overlapping with the semiconductor layer 109_2b2, and a region 189f sandwiched between the region 189d and the region 189e in the plan view.

The semiconductor layer 109_2c includes a region overlapping with the electrode 112_2 with the insulating layer 111_2 located therebetween in the region 189d. The semiconductor layer 109_2c includes a region overlapping with the electrode 112_2 with the insulating layer 111_2 located therebetween in the region 189e. The semiconductor layer 109_2c includes a region overlapping with the electrode 112_2 with the insulating layer 111_2 located therebetween in the region 189f. Furthermore, the region 189f of the semiconductor layer 109_2c can function as a channel formation region.

In the transistor 200J, the semiconductor layer 109_2c includes a region electrically connected to the electrode 116_2a with the semiconductor layer 109_2b1 located therebetween. The semiconductor layer 109_2c includes a region electrically connected to the electrode 116_2b through the semiconductor layer 109_2b2.

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