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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

A smaller energy barrier allows electrons to move more easily. In general, the work functions of even the same metal materials are likely to vary because of the deposition condition, the crystal orientation, and the like. When the work function of the source electrode varies, the amount of electrons that move from the source electrode to the channel (the amount of current) is likely to vary. That is to say, the electrical characteristics of a transistor are likely to noticeably vary. However, when the height of the energy barrier is small, an influence of variation in the work function can also be small. The height of the energy barrier is preferably 0.3 eV or less, more preferably 0.2 eV or less.

According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be provided. According to one embodiment of the present invention, a transistor with a small variation in electrical characteristics can be provided.

[Example of Method for Manufacturing Semiconductor Device 1000J]

An example of a method for manufacturing a semiconductor device 1000J is described. In order to avoid repeated description, a description is mainly made on portions different from the method for manufacturing the semiconductor device 1000.

First, the steps up to Step 10 described above are performed. Next, when the opening 171 is formed in Step 11, the layer 187 in a region where the transistor 200J is formed is also removed (see FIG. 22A).

權(quán)利要求

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