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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

Next, Step 14 is performed. A resist mask is formed not only in a region where the transistor 100 is formed but also in the region where the transistor 200J is formed. When the resist mask is used as a mask, a portion of each of the semiconductor layer 184a, the semiconductor layer 184b, the conductive layer 188, and the layer 186 is selectively removed, so that the semiconductor layer 109_1a, the semiconductor layer 109_1b, the electrode 110_1a, the electrode 110_1b, the layer 129_1a, the layer 129_1b, the semiconductor layer 109_2a1, the semiconductor layer 109_2b1, the semiconductor layer 109_2a2, and the semiconductor layer 109_2b2 are formed (see FIG. 23A).

權(quán)利要求

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