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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

A semiconductor device 1000M illustrated in FIG. 25 includes a transistor 100M and a transistor 200M. The transistors 100M and 200M are different from the transistors 100L and 200L in the shape of the semiconductor layer 109c.

In the transistor 100M, the layer 129, the electrode 110_1, the semiconductor layer 109_1a, and the semiconductor layer 109_1b are covered with the semiconductor layer 109_1c. Thus, the semiconductor layer 109_1c includes a region overlapping with a side surface of the layer 129, a region overlapping with a side surface of the electrode 110_1, a region overlapping with a side surface of the semiconductor layer 109_1a, and a region overlapping with a side surface of the semiconductor layer 109_1b.

In the transistor 200M, the semiconductor layer 109_2a and the semiconductor layer 109_2b are covered with the semiconductor layer 109_2c. Thus, the semiconductor layer 109_2c includes a region overlapping with a side surface of the semiconductor layer 109_2a and a region overlapping with a side surface of the semiconductor layer 109_2b.

權(quán)利要求

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