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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

An OS transistor is preferably used as each of the transistors 612 and 634. Since the off-state current of the OS transistor is extremely low as described above, the capacitor 633 can be small or omitted. Furthermore, when the transistors 612 and 634 are OS transistors, the potential of the node 637 is less likely to be changed. Thus, an imaging device that is less likely to be affected by noise can be provided.

FIG. 41 illustrates a structure example of the pixel 645. FIG. 41 is a cross-sectional view of the pixel 645. In the pixel 645 illustrated in FIG. 41, an n-type semiconductor is used for the substrate 401. A p-type semiconductor 621 of the photoelectric conversion element 638 is provided in the substrate 401. A portion of the substrate 401 functions as an n-type semiconductor 622 of the photoelectric conversion element 638.

The transistor 635 is provided on the substrate 401. The transistor 635 can function as an n-channel transistor. A well 620 of a p-type semiconductor is provided in a portion of the substrate 401. The well 620 can be provided by a method similar to that for forming the p-type semiconductor 621. The well 620 and the p-type semiconductor 621 can be formed at the same time. Note that the transistor 282 described above can be used as the transistor 635, for example.

權(quán)利要求

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