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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

More specifically, the insulating layer 102 is provided over the substrate 101, and the insulating layer 103 is provided over the insulating layer 102. The insulating layer 106 is provided over the insulating layer 103, and the wiring 118_1 is provided in the same layer as the insulating layer 106. In this embodiment, an example in which the wiring 118_1 is a stacked layer of a wiring 118_1a and a wiring 118_1b is described. The insulating layer 107 is provided over the insulating layer 106 and the wiring 118_1, and the insulating layer 104 is provided over the insulating layer 107. The electrode 105_1 is provided in the same layer as the insulating layers 107 and 104.

The insulating layer 108 is provided over the electrode 105_1 and the insulating layer 104. The insulating layer 108 has a projection, the semiconductor layer 109_1a is provided over the projection, and the semiconductor layer 109_1b is provided over the semiconductor layer 109_1a.

權(quán)利要求

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