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Transistor, semiconductor device, and electronic device

專利號
US10096720B2
公開日期
2018-10-09
申請人
Semiconductor Energy Laboratory Co., Ltd.（JP Atsugi-shi, Kanagawa-ken）
發(fā)明人
Yoshinori Ando
IPC分類
H01L27/12; H01L29/786; H01L29/66
技術(shù)領(lǐng)域
layer,transistor,insulating,electrode,in,109_1b,oxide,be,or,wiring
地域： Atsugi-shi, Kanagawa-ken

摘要

To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

說明書

The insulating layer 111_1 is provided over the semiconductor layer 109_1c, and the electrode 112_1 is provided over the insulating layer 111_1. The insulating layer 111_1 and the electrode 112_1 include a region overlapping with the region 189c. In this embodiment, an example in which the electrode 112_1 is a stacked layer of an electrode 112_1a and an electrode 112_1b is described.

The transistor 100 further includes the insulating layer 113_1 over the electrode 112_1. The electrode 112_1 is covered with the insulating layer 113_1. The insulating layers 111_1 and 113_1 extend beyond an end portion of the electrode 112_1, and have a region where the insulating layers 111_1 and 113_1 are in contact with each other in the extended portion.

In this embodiment, an insulating layer 114 is provided to cover the transistor 100, and an insulating layer 115 is provided over the insulating layer 114.

權(quán)利要求

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