Transistor, semiconductor device, and electronic device
摘要
說明書
Note that in each of the transfer chamber 2704, the substrate heating chamber 2705, and the deposition chamber 2706b that are described above, the back pressure (total pressure) and the partial pressure of each gas molecule (atom) are preferably set as follows. In particular, the back pressure and the partial pressure of each gas molecule (atom) in the deposition chamber 2706b need to be noted because impurities might enter a film to be formed.
In each of the above chambers, the back pressure (total pressure) is less than or equal to 1×10?4 Pa, preferably less than or equal to 3×10?5 Pa, further preferably less than or equal to 1×10?5 Pa. In each of the above chambers, the partial pressure of a gas molecule (atom) having a mass-to-charge ratio (m/z) of 18 is less than or equal to 3×10?5 Pa, preferably less than or equal to 1×10?5 Pa, further preferably less than or equal to 3×10?6 Pa. Moreover, in each of the above chambers, the partial pressure of a gas molecule (atom) having a mass-to-charge ratio (m/z) of 28 is less than or equal to 3×10?5 Pa, preferably less than or equal to 1×10?5 Pa, further preferably less than or equal to 3×10?6 Pa. Furthermore, in each of the above chambers, the partial pressure of a gas molecule (atom) having a mass-to-charge ratio (m/z) of 44 is less than or equal to 3×10?5 Pa, preferably less than or equal to 1×10?5 Pa, further preferably less than or equal to 3×10?6 Pa.
Note that a total pressure and a partial pressure in a vacuum chamber can be measured using a mass analyzer. For example, Qulee CGM-051, a quadrupole mass analyzer (also referred to as Q-mass) manufactured by ULVAC, Inc. may be used.
