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Methods of forming colloidal nanocrystal-based thin film devices

專利號
US10096734B2
公開日期
2018-10-09
申請人
THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA（US PA Philadelphia）
發(fā)明人
Cherie R. Kagan; Aaron T. Fafarman; Ji-Hyuk Choi; Weon-Kyu Koh; David K. Kim; Soong Ju Oh; Yuming Lai; Sung-Hoon Hong; Sangameshwar Rao Saudari; Christopher B. Murray
IPC分類
H01B1/06; H01L31/07; H01L29/06; B82Y10/00; B82Y40/00; H01L29/41; H01L29/786; H01L31/032; H01L29/22; H01L29/24; H01L29/45; H01L29/49; H01L29/66; H01L31/18; H01L29/12; H01L29/18; B82Y20/00
技術(shù)領(lǐng)域
ncs,nc,ligands,in,thin,ligand,nh4scn,au,substrate,deposited
地域： PA PA Philadelphia

摘要

Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

說明書

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a divisional patent application of U.S. patent application Ser. No. 13/969,863, filed Aug. 19, 2013, which claims priority to U.S. Provisional Patent Application No. 61/754,248, filed Jan. 18, 2013, and U.S. Provisional Patent Application No. 61/684,425, filed Aug. 17, 2012, each of which is incorporated herein by reference in its entirety for all purposes.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH

Aspects of this invention were made with government support under one or more of: contract number DMS-0935165 awarded by the National Science Foundation (NSF) Solar Program; under contract number DE-SC0002158 awarded by the U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering; under contract number ONR-N00014-10-1-0942 awarded by the Office of Naval Researched MURI Program; under contract number CBET-0854226 awarded by NSF-CBET; and under contract number DMR11-20901 awarded by the NSF. The government has rights in this invention.

FIELD OF THE INVENTION

The invention relates to the field of colloidal nanocrystal-based thin films and solutions.

BACKGROUND OF THE INVENTION

權(quán)利要求

1
What is claimed:1. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the steps of:depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; anddoping the NC thin-film with a metal.2. The method of claim 1, wherein the doping step comprises evaporation and thermal diffusion.3. The method of claim 1, wherein the metal is at least one of indium-based, lead-based, tin-based, gallium-based or selenium-based.4. The method of claim 1, wherein the doping step occurs at about room temperature.5. The method of claim 1, wherein the doping step is initiated by annealing.6. The method of claim 1, wherein the doping step comprises blanket deposition.7. The method of claim 1, wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.8. The method of claim 1, wherein the substrate is flexible.9. The method of claim 1, wherein the metal is patterned on the NC thin film device.10. The method of claim 1, further comprising depositing one or more additional layer of NCs on the previously deposited layer of NCs.11. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the step of:depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands.12. The method of claim 11, wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.13. The method of claim 11, wherein the substrate is flexible.14. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the steps of:depositing a dispersion of NCs on a substrate; anddoping the NC thin film with a metal by evaporation and thermal diffusion to form a NC-based thin film device.15. The method of claim 14, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands.16. The method of claim 14, wherein the doping step comprises annealing the NC thin film with a metal, thereby diffusing a portion of the metal into the NC thin film.17. The method of claim 14, wherein the metal is at least one of indium-based, lead-based, or selenium-based.18. The method of claim 14, wherein the deposited NC thin-film is doped at about room temperature.19. The method of claim 14, wherein the deposited NC thin film is doped by annealing.20. The method of claim 14, wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.21. The method of claim 14, wherein the substrate is flexible.22. The method of claim 14, wherein the metal is patterned on the NC thin film device.
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