At block 406, at least one additional layer of NCs is optionally deposited on the previously deposited layer of NCs to fill void spaces in the NC layer due to shrinkage resulting from the ligand exchange of block 404. After the additional layer is deposited, the structure may subsequently be immersed in a bath containing a solution with shorter ligands by repeating the step of block 404, ensuring the void spaces of the underlying thin film are substantially filled. In the subsequent bath, the shorter ligands may be chalcogenocyanate-based. In a particular embodiment, the shorter ligands are NH4SCN. In some embodiments, up to three monolayers of the synthesized NCs are successively deposited over the shrunken film. It is contemplated that more monolayers may be deposited to accommodate shrinkage. In alternative embodiments, thicker layers are deposited over the shrunken film to improve the conductivity of the thin film and/or improve light absorption. In further embodiments, a thicker NC layer is desirable where the device fabricated is used as a photodetector or in solar cell applications.