At block 620, source and drain electrodes are formed on the NC layer and the device is optionally doped. The formation of the electrodes may occur in a nitrogen glovebox. In one embodiment, the nitrogen glovebox contains an integrated evaporator. The electrodes may be deposited by evaporation through a shadow mask on the NC layer. The electrodes may be In, Au, Ag, or any other material suitable to render the device operable. In one embodiment, the electrodes may be metal NCs and the NCs may have xCN-based ligands. The electrodes may contain a metal doping layer as described in block 408 and the NC layer may be doped by evaporation and thermal diffusion of the metal doping layer. In a particular embodiment, In, Pb, and/or Se may comprise the metal doping layer in the electrodes. In an exemplary embodiment, the electrodes are Au formed on top of In. In embodiments where the electrodes are In, the thickness of the electrodes may be about 50 nm. In embodiments where the electrodes are Au formed on top of In, the thickness of the Au electrodes may be about 40 nm and the thickness of the In electrodes may be about 10 nm to about 50 nm. In some embodiments, a metal may be blanket deposited over the NC thin film and used to dope the NC thin film by evaporation and thermal diffusion, as described at block 302. In particular embodiments, the blanket deposited metal may be In, Pb, and/or Se. In an exemplary embodiment, the thickness of the blanket deposited layer may be between about 0.1 A and about 30 A. Other suitable materials will be understood by one of skill in the art from the description herein. The formation of electrodes may complete a back-gate/top-contact FET. In one embodiment, the formation of electrodes completes a back-gate/bottom contact FET. The electrodes may be fabricated to different topologies or configurations used to form different integrated circuits. In one embodiment, the electrodes may comprise metal NCs and the NCs may have xCN-based ligands. Metal NC electrodes may be used to form a bottom contact device or a top contact device. In a particular embodiment, the source and drain electrodes were deposited in a back-gate/bottom-contact FET by spincoating silver NCs atop a resist patterned by imprint lithography, with subsequent xCN-based ligand treatment. In an alternative embodiment, the silver NCs to be used as source and drain electrodes may have undergone xCN-based ligand treatment according to the solution exchange method of flowchart 20.