FIG. 11A is a depiction illustrating a CdSe flexible thin-film FET fabricated in accordance with this embodiment of the invention. FIG. 11B is a depiction illustrating an alternative embodiment of a CdSe flexible thin-film FET in a bottom-contact bottom-gate configuration. FIG. 11C is a depiction illustrating another alternative embodiment of a CdSe flexible thin-film FET in top-contact bottom-gate configuration. Although CdSe flexible thin-film FETs are depicted in FIGS. 11A-11C, one of skill in the art will recognize how to make non-flexible FETs as well as other devices and will understand the materials that may be used to make other flexible and non-flexible structures utilizing the invention from the description herein.

Photodetector Fabrication: In one embodiment, photodetector devices were fabricated in accordance with the following method. Precleaned quartz was used as a substrate onto which 20 nm thick Au electrodes (10 um channel length, 150 um channel width) were photolithographically defined. CdSe NCs that underwent the solution ligand exchange method above were used. Thin films of CdSe NCs were drop-cast from DMF onto the substrate held at 50 C. The active area was sealed using epoxy (5 minutes, ITW Devcon) under a glass overslip in a nitrogen atmosphere.