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Quantum dot light enhancement substrate and lighting device including same

專(zhuān)利號(hào)
US10096744B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
SAMSUNG ELECTRONICS CO., LTD.（KR Gyeonggi-Do）
發(fā)明人
Seth Coe-Sullivan; Peter Kazlas
IPC分類(lèi)
H01L33/06; H01L33/04; H01L33/42; H01L33/50; H01L33/58; H01L33/60; H01L51/50; H01L51/52; H01L51/56; H05B33/14; H01L27/32; H01L31/0352
技術(shù)領(lǐng)域
quantum,dots,qd,in,light,ccm,material,qds,certain,emitting
地域： Suwon-si

摘要

A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.

說(shuō)明書(shū)

Ph-OLED devices were shown to operate with nearly 100% internal quantum efficiencies. However, only a fraction of the total photons generated in these devices are usefully extracted because of the total internal reflection (TIR) and wave-guiding effects of the high-index layers comprising the device and anode. The loss mechanism is associated with the absorption of the reflected and wave-guided photons by the metal electrode, the organic layers themselves, and the indium tin oxide (ITO) electrode. Consequently, the measured external quantum efficiencies of these devices are typically only ?20% of the internal efficiency (T. Tsutsui, E. Aminaka, C. P. Lin, D.-U. Kim, Philos. Trans. R. Soc. London A 1997, 355, 801, N. K. Patel, S. Cina, J. H. Burroughes, IEEE J. Sel. Top. Quantum Electron. 2002, 8, 346)

While many methods have been proposed and attempted to increase the light out-coupling efficiency within an OLED device structure, considerable improvements are still needed to enable OLEDs to achieve the performance and cost needed to enter the solid state lighting (SSL) market.

While increases in extraction efficiency have been realized, considerable room for improvement remains.

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