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Light emitting diode capable of generating different light colors over single wafer

專利號
US10096745B1
公開日期
2018-10-09
申請人
EXCELLENCE OPTO. INC.（TW Miaoli County, Hsinchu Science Park）
發(fā)明人
Kuo-Hsin Huang; Chun-Der Wu; Tzeng-Guang Tsai; Kuo-Shu Tseng
IPC分類
H01L33/08; H01L33/50; H01L33/00; H01L33/48
技術(shù)領(lǐng)域
emitting,led,light,layer,wafer,photo,type,substrate,wavelength,least
地域： Miaoli County

摘要

A wafer substrate, a light emitting diode (LED) light-emitting layer, a circuit layer and an excitation material layer are included. The LED light-emitting layer includes at least two light-emitting regions, independently distinguished. The circuit layer includes at least two circuit structures that correspond to the at least two light-emitting regions in quantity and are independently controlled. The excitation material layer includes at least one photo-luminescence material, at least one of the at least two light-emitting regions is provided with different photo-luminescence materials, and at least one of the at least two light-emitting regions is not provided with the photo-luminescence material. Accordingly, in the present invention, at least two light colors can be formed over a single wafer substrate through the at least two independently-controlled circuit structures and providing the different photo-luminescence materials.

說明書

1 2 3 4 5 6 7 8 9 10
FIELD OF THE INVENTION

The present invention relates to a light source structure of a light emitting diode (LED), and more particularly to an LED structure capable of generating different light colors over a single wafer.

BACKGROUND OF THE INVENTION

A light emitting diode (LED) is a luminescence assembly. A luminescence principle thereof is to exert a forward bias voltage (current) on a III-V compound semiconductor material, and to utilize a form of combining electrons and electron holes in the LED with each other and converting energy into light, where light can be emitted during energy release and the LED will not be as hot as an incandescent lamp bulb after being used for a long time. The LED is advantageous in small size, long life, low drive voltage, high response rate and excellent seismic resistance, can meet demands for various lightweight, thin and miniaturized devices, and has become a product popularized in daily life.

Referring to FIG. 1 and FIG. 2, LEDs may be mainly divided into a vertical-type LED (FIG. 1) and a horizontal-type LED (FIG. 2) according to different drive structures (electrode structures). The LED structurally comprises a wafer substrate 1, an LED light-emitting layer 2 and a circuit layer 3, the wafer substrate 1 being divided into a conductive (vertical-type LED) substrate and a non-conductive (horizontal-type LED) substrate, and adopting a silicon substrate, a sapphire substrate, etc.

權(quán)利要求

1
What is claimed is:1. A light emitting diode (LED) light-emitting layer structure capable of generating different light colors over a single wafer, comprising:a wafer substrate;an LED light-emitting layer provided on the wafer substrate, the LED light-emitting layer having at least two light-emitting regions, independently distinguished;a circuit layer providing a forward bias voltage for the LED light-emitting layer, the circuit layer having at least two circuit structures that correspond to the at least two light-emitting regions in quantity and are independently controlled; andan excitation material layer covering the LED light-emitting layer, the excitation material layer having at least two photo-luminescence materials, and at least two different photo-luminescence materials being provided on the at least two light-emitting regions.2. The LED light-emitting layer structure capable of generating different light colors over a single wafer according to claim 1, wherein the wafer substrate is conductive, the LED light-emitting layer includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, the at least two circuit structures include a second-type electrode and a first-type electrode respectively, the second-type electrode is provided below the wafer substrate, and the first-type electrode is provided over the first-type semiconductor layer.3. The LED light-emitting layer structure capable of generating different light colors over a single wafer according to claim 1, wherein the LED light-emitting layer includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, the at least two circuit structures include a second-type electrode and a first-type electrode respectively, and the first-type electrode and the second-type electrode are provided on the first-type semiconductor layer and the second-type semiconductor layer respectively.4. The LED light-emitting layer structure capable of generating different light colors over a single wafer according to claim 1, wherein a combined appearance of the at least two light-emitting regions is of any one of a fan shape, a rectangle and a polygon.
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