Referring to FIG. 4, FIG. 4 is an optical structure diagram of a second embodiment of the present invention. In the present embodiment, the excitation material layer 40 includes at least one photo-luminescence material 401, at least one of the at least two light-emitting regions 201 is provided with the photo-luminescence material 401, and at least one of the at least two light-emitting regions 201 is not provided with the photo-luminescence material 401. Different from the first embodiment, the present embodiment is characterized in that the excitation material layer 40 does not cover the at least one LED light-emitting layer 20, and when there are two or more light-emitting regions 201 provided with the photo-luminescence material 401, different photo-luminescence materials 401 may be provided respectively.

Referring to FIG. 5, FIG. 5 is an optical structure diagram of a third embodiment of the present invention. The structure is illustrated with a horizontal-type LED. Different from the first embodiment, the present embodiment is characterized in that the wafer substrate 10 is not limited to a highly-conductive material, and therefore a silicon substrate may be adopted; the first-type semiconductor layer 21 is provided on the wafer substrate 10, and the first-type semiconductor layer 21 is exposed to allow provision of the first-type electrode 31. That is, regions of the light-emitting layer 22 and the second-type semiconductor layer 23 will be drawn back, and in addition, the second-type electrode 32 is provided on the second-type semiconductor layer 23.