Semiconductor device package
地域：
Seoul
摘要
A semiconductor device package and a lighting device including a semiconductor device package are provided. The semiconductor device package may include a substrate, a first electrode module provided on the substrate, a light emitting device provided in a first region of the first electrode module, a second electrode module electrically disconnected from the first electrode module and provided on the substrate, and an insulating reflection layer provided on a circumference of the light emitting device between the first electrode module and the second electrode module and having a polygonal shape.
說(shuō)明書
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
This application claims priority under 35 U.S.C. § 119 to Korean Application No. 10-2016-0158043 filed on Nov. 25, 2016, whose entire disclosure is incorporated herein by reference.
Embodiments provide a semiconductor device package and a lighting device including a semiconductor device package.
Semiconductor devices, which may include a compound such as GaN or AlGaN, have energy bandgaps that may be wide and easy to control, and thus, may be variously used as light emitting devices, light receiving devices, and different kinds of diodes. Light receiving devices, such as, e.g., light emitting diodes (LEDs) or laser diodes using Group III-V or II-VI compound semiconductor materials may emit various colors, such as, e.g., red, green, blue, and ultraviolet (UV) due to development of thin film growth technology and device materials, may emit white light having good efficiency by using fluorescent materials or combining colors, and may have low power consumption, a semi-permanent lifetime, a fast response time, safety, and environmental affinity in comparison with, for example, fluorescent lamps and incandescent lamps.
權(quán)利要求
What is claimed is:1. A semiconductor device package comprising:a substrate; a first electrode module provided on the substrate; a second electrode module electrically disconnected from the first electrode module and provided on the substrate; a light emitting device provided on the first electrode module; an insulating reflection layer provided between the first electrode module and the second electrode module; and an optical lens provided on the insulating reflection layer, wherein an upper surface of the insulating reflection layer is provided in a polygonal shape having a plurality of vertexes including: at least one first point where a distance to a center of the substrate is within a first range; and an angle between an upper surface of the substrate and a contact line circumscribing the optical lens is 60 degrees to 90 degrees, wherein the at least one first point vertically overlaps a line that connects an external contact point between the contact line and the optical lens to a point at which the contact line contacts the substrate. 2. The semiconductor device package of claim 1 , wherein the optical lens includes a lens part and a curvature part, and curvature directions of the lens part and the curvature part differ. 3. The semiconductor device package of claim 2 , wherein the first point vertically overlaps the curvature part. 4. The semiconductor device package of claim 1 , wherein the plurality of vertexes of the insulating reflection layer include the first point and a second point where a distance to a center of the insulating reflection layer is less than the first range. 5. The semiconductor device package of claim 4 , wherein the second electrode module includes a first protrusion and a second protrusion that protrude in a direction from an outer surface of the second electrode module to the light emitting device. 6. The semiconductor device package of claim 5 , wherein a vertical width of each of the first protrusion and the second protrusion is constant. 7. The semiconductor device package of claim 6 , wherein a first distance, which is a vertical distance between a first region, where the light emitting device is provided, of the first electrode module and the first protrusion or the second protrusion of the second electrode module, is within a range of 1/10 to 3/10 of a width of the first region in a first axis direction. 8. The semiconductor device package of claim 5 , wherein the first electrode module includes:a third region provided in a lower corner region of the first electrode module; a fourth region provided in an upper corner region of the first electrode module; and a fifth region provided between the first region and each of the third and second regions. 9. The semiconductor device package of claim 8 , wherein the second electrode module includes a first connector provided in the second region and the upper corner region of the first electrode module, and a vertical width of the first connector is less than a vertical width of the second region. 10. The semiconductor device package of claim 9 , wherein the second electrode module includes a fourth protrusion provided in a lower corner region of the second electrode module and a fifth protrusion provided in an upper corner region of the second electrode module, the fourth protrusion corresponds to the third region of the first electrode module, and the fifth protrusion corresponds to the fourth region of the first electrode module. 11. The semiconductor device package of claim 10 , wherein the insulating reflection layer is provided between the fourth protrusion and the third region and electrically disconnects the second electrode module from the first electrode module. 12. The semiconductor device package of claim 11 , wherein the insulating reflection layer is provided between the fifth protrusion and the fourth region and electrically disconnects the second electrode module from the first electrode module. 13. The semiconductor device package of claim 12 , wherein the insulating reflection layer includes:a first separation region provided between the fifth protrusion of the second electrode module and the fourth region of the first electrode module, the first separation region being an electrode separation region; and a second separation region provided between the fourth protrusion of the second electrode module and the third region of the first electrode module, the second separation region being an electrode separation region. 14. The semiconductor device package of claim 1 , wherein the insulating reflection layer does not vertically overlap the first electrode module and the second electrode module. 15. The semiconductor device package of claim 9 , wherein a width of the second region of the first electrode module in a first axis direction is ? to ? of a width of the first region of the first electrode module in the first axis direction. 16. The semiconductor device package of claim 9 , wherein a length and a width of the first connector are set less than a length and a width of the fifth region of the first electrode module. 17. The semiconductor device package of claim 1 , further comprising: a resin reflection layer provided on a side circumference of the light emitting device. 18. The semiconductor device package of claim 17 , wherein the light emitting device includes a light emitting chip and a phosphor layer provided on the light emitting chip, and the resin reflection layer is provided on a side surface of the light emitting chip and a side surface of the phosphor layer. 19. The semiconductor device package of claim 17 , wherein a portion of the resin reflection layer is provided along a side surface of the light emitting device and is provided more inward than an outer surface of the phosphor layer. 20. A semiconductor device package comprising:a substrate; a first electrode module provided on the substrate; a second electrode module separated from the first electrode module and provided on the substrate; and an insulating reflection layer provided between the first electrode module and the second electrode module, wherein the first electrode module includes: a first electrode extension provided outside the first electrode module with respect to a first axis to extend a second axis direction vertical to the first axis; a first region separated from the first electrode extension in a third axis direction opposite to the first axis, a light emitting device being provided in the first region; a second region separated from the first electrode extension in a first axis direction and separated from the first region in the second axis direction vertical to the first axis direction, a protection device being provided in the second region; a first connector provided between the first region and the first electrode extension to electrically connect the first region to the first electrode extension; and a second connector provided between the second region and the first electrode extension to electrically connect the second region to the first electrode extension, wherein the first electrode extension includes: a first vertical part provided in parallel with the second axis direction between the first connector and the second connector; a first diagonal part provided between the first vertical part and the second connector to have a width that corresponds to the first axis direction and increases progressively closer to the second axis direction; a first protrusion separated from the second region in the second axis direction, provided outside the first electrode module with respect to a second axis, connected to the first diagonal part, and provided to protrude in the first axis direction; a second protrusion provided outside the first region in a fourth axis direction opposite to the second axis direction; and a second diagonal part provided between the second protrusion and the first vertical part of the first electrode extension to have a width that corresponds to the first axis direction and increases progressively closer to the fourth axis direction, wherein the second electrode module includes: a second electrode extension provided outside the second electrode module in the third axis direction to extend in the second axis direction; a first bonding part provided in the first axis direction to have a region overlapping the first region and connected to the second electrode extension; a second bonding part provided in the first axis direction to have a region overlapping the first region, separated from the first bonding part in the second axis direction, and connected to the second electrode extension; a third bonding part provided in the first axis direction to have a region overlapping the second region and connected to the second electrode extension; a third protrusion provided to extend in the first axis direction, separated from the third bonding part in the second axis direction, and connected to the second electrode extension; and a fourth protrusion provided to extend in the first axis direction, separated from the second bonding part in the fourth axis direction, and connected to the second electrode extension, and wherein the second electrode extension part includes: a second vertical part provided in parallel with the second axis direction between the first bonding part and the second bonding part; a third diagonal part provided between the third protrusion and the second vertical part to have a width that corresponds to the first axis direction and increases progressively closer to the second axis direction; and a fourth diagonal part provided between the fourth protrusion and the second vertical part to have a width that corresponds to the first axis direction and increases progressively closer to the fourth axis direction.
意見(jiàn)反饋
使用該功能遇到問(wèn)題
該功能需要專業(yè)版企業(yè)版VIP權(quán)限，您可以：
您也可以聯(lián)系官方QQ: 2157717237 電話: 13264338900