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Semiconductor device package

專利號
US10096760B2
公開日期
2018-10-09
申請人
LG INNOTEK CO., LTD.（KR Seoul）
發(fā)明人
Eun Joo Kim; Ga Yeon Kim; Nak Hun Kim; Jung Hwan Son; Young Hyun Jeon
IPC分類
F21V5/00; H01L33/64; F21V5/04; H01L33/60; H01L33/62; H01L33/38; H01L33/58; F21Y115/10; H01L33/50
技術(shù)領域
electrode,may,reflection,layer,first,unit,light,emitting,protrusion,region
地域： Seoul

摘要

A semiconductor device package and a lighting device including a semiconductor device package are provided. The semiconductor device package may include a substrate, a first electrode module provided on the substrate, a light emitting device provided in a first region of the first electrode module, a second electrode module electrically disconnected from the first electrode module and provided on the substrate, and an insulating reflection layer provided on a circumference of the light emitting device between the first electrode module and the second electrode module and having a polygonal shape.

說明書

Materials of the first and second electrode units 210 and 220 may be primarily formed in a region other than a region where a light emitting chip is to be formed on a substrate, and then, materials of the first and second electrode units may be removed from a region where the insulating reflection layer 230 is to be formed, whereupon the insulating reflection layer 230 may be formed. The materials of the first and second electrode units 210 and 220 may be formed in only the region where the insulating reflection layer 230 is to be formed, and the insulating reflection layer 230 may be formed in a region where the insulating reflection layer 230 is to be formed. Therefore, a height of each of the first and second electrode units 210 and 220 and a height of the insulating reflection layer 230 may be provided on a same horizontal surface, or the height of the insulating reflection layer 230 may be set differently from that of each of the first and second electrode units 210 and 220. The height of the insulating reflection layer 230 may be adjusted in consideration of thermal stability based on heat transferred from the first and second electrode units 210 and 220 to the insulating reflection layer 230.

權(quán)利要求

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