白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Semiconductor device package

專利號(hào)
US10096760B2
公開(kāi)日期
2018-10-09
申請(qǐng)人
LG INNOTEK CO., LTD.(KR Seoul)
發(fā)明人
Eun Joo Kim; Ga Yeon Kim; Nak Hun Kim; Jung Hwan Son; Young Hyun Jeon
IPC分類
F21V5/00; H01L33/64; F21V5/04; H01L33/60; H01L33/62; H01L33/38; H01L33/58; F21Y115/10; H01L33/50
技術(shù)領(lǐng)域
electrode,may,reflection,layer,first,unit,light,emitting,protrusion,region
地域: Seoul

摘要

A semiconductor device package and a lighting device including a semiconductor device package are provided. The semiconductor device package may include a substrate, a first electrode module provided on the substrate, a light emitting device provided in a first region of the first electrode module, a second electrode module electrically disconnected from the first electrode module and provided on the substrate, and an insulating reflection layer provided on a circumference of the light emitting device between the first electrode module and the second electrode module and having a polygonal shape.

說(shuō)明書

A width W5 of the first protrusion 220a or the second protrusion 220b of the second electrode unit 220 in the first axis (X) direction may be about 3/10 to about 4/10 of the width W10 of the first side of the substrate 201 in the first axis (X) direction. Since the insulating reflection layer 230 may include the first recess 230a and the second recess 230b, the second electrode unit 220 may include the first protrusion 220a or the second protrusion 220b. An area of the first protrusion 220a or the second protrusion 220b of the second electrode unit 220 may be equal to or less than that of the first recess 230a or the second recess 230b of the insulating reflection layer 230.

權(quán)利要求

1
微信群二維碼
意見(jiàn)反饋