Semiconductor device package
摘要
說明書
The second region 210d may have a shape thatprotrudes in a direction opposite to the first axis X from the upper corner region of the first electrode unit 210. For example, the second region 210d may protrude, through a first connection part or first connector 210f, in the direction opposite to the first axis X from the upper corner region of the first electrode unit 210. A vertical width of the first connection part 210f may be less than a vertical width of the second region 210d. A width of the second region 210d may secure a region where the protection device 105 is provided. In this case, the vertical width of the first connection part 210f may be controlled less than the vertical width of the second region 210d, and thus, an optimal width of the insulating reflection layer 230 may be obtained, thereby enhancing a coupling force with an optical lens and increasing a light reflectance.
A length D4 of the first connection part 210f in the first axis (X) direction may be less than a length D3 of the fifth region 210b of the first electrode unit 210 in the first axis (X) direction. A width W4 of the first connection part 210f in the second axis (Y) direction may be less than a width W3 of the fifth region 210b of the first electrode unit 210 in the second axis (Y) direction. For example, the length D4 of the first connection part 210f in the first axis (X) direction may be within a range of ? to 9/10 of the length D3 of the fifth region 210b of the first electrode unit 210 in the first axis (X) direction.
