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Semiconductor device package

專利號(hào)
US10096760B2
公開日期
2018-10-09
申請(qǐng)人
LG INNOTEK CO., LTD.（KR Seoul）
發(fā)明人
Eun Joo Kim; Ga Yeon Kim; Nak Hun Kim; Jung Hwan Son; Young Hyun Jeon
IPC分類
F21V5/00; H01L33/64; F21V5/04; H01L33/60; H01L33/62; H01L33/38; H01L33/58; F21Y115/10; H01L33/50
技術(shù)領(lǐng)域
electrode,may,reflection,layer,first,unit,light,emitting,protrusion,region
地域： Seoul

摘要

A semiconductor device package and a lighting device including a semiconductor device package are provided. The semiconductor device package may include a substrate, a first electrode module provided on the substrate, a light emitting device provided in a first region of the first electrode module, a second electrode module electrically disconnected from the first electrode module and provided on the substrate, and an insulating reflection layer provided on a circumference of the light emitting device between the first electrode module and the second electrode module and having a polygonal shape.

說明書

The second electrode extension part of the second electrode unit 220 may include a second vertical part 220g1 provided in parallel with the second axis (Y) direction between the first bonding part 220a and the second bonding part 220b, a third diagonal part 220g2 provided between the third protrusion 220e and the second vertical part 220g1 and having a width that corresponds to the first axis (X) direction and increases progressively closer to the second axis (Y) direction, and a fourth diagonal part 220g3 provided between the fourth protrusion 220c and the second vertical part 220g1 and having a width that corresponds to the first axis (X) direction and increases progressively closer to the fourth axis (?Y) direction.

Since a thickness of the second connection part 220f may be thinly set in the third bonding part 220d, a region of the second electrode unit 220 where discoloration may occur may be minimized, thereby solving a problem where light speed is reduced and electrical reliability is reduced due to a discoloration of a plating layer.

FIG. 3 is a cross-sectional view of the substrate 201 and the light emitting device 100 in the semiconductor device package 200 according to the embodiment. The light emitting device 100 may include a light emitting chip 110 and a phosphor layer 120 provided on the first electrode unit 210.

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