Semiconductor device package
摘要
說(shuō)明書(shū)
The insulating reflection layer 230 may include a plurality of polygonal shapes or a plurality of recess structures, thereby enhancing a coupling force between the optical lens 260 and the insulating reflection layer 230. In order to enhance a light extraction efficiency of the semiconductor device package 200, the insulating reflection layer 230 may use phenyl-based silicon which has a refractive index of 1.45 to 1.7 at a wavelength of 450 nm, thereby enhancing a reflection function. In a case where the reflection function of the insulating reflection layer 230 is enhanced, thermal stability may be reduced in terms of a material characteristic. In this case, the substrate 201 may use nitride-based aluminum (for example, AlN) which is high in thermal stability, thereby improving both the thermal stability and light extraction efficiency of the semiconductor device package 200. In the semiconductor device package 200, in consideration of a thermal expansion coefficient of each of the first and second electrode units 210 and 220, the insulating reflection layer 230, and the substrate 201, thermal stability may be improved, and light extraction efficiency may be considerably enhanced.
