According to embodiments disclosed herein, a semiconductor device package may include a substrate 201; a first electrode unit 210 provided on the substrate 201; a second electrode unit 220 electrically disconnected from the first electrode unit 210 and provided on the substrate 201; a light emitting device 100 provided on the first electrode unit 210; an insulating reflection layer 230 provided between the first electrode unit 210 and the second electrode unit 220; and an optical lens 260 provided on the insulating reflection layer 230.
An upper surface of the insulating reflection layer 230 may be provided in a polygonal shape including a plurality of vertexes. When a center of the substrate 201 has a tetragonal shape, for example, a square shape, the center may be a point contacting a diagonal line. The center of the substrate 201 may vertically overlap a center of the light emitting device 100, but is not limited thereto. Also, the center of the substrate 201 may vertically overlap a center of the first region 210a of the first electrode unit 210, but is not limited thereto.